The development of high brightness blue LEDs and blue laser diodes required many breakthroughs of III-Nitride growth, p-type conductivity control and device structures using InGaN/GaN double heterostructures. First, the speaker will discuss the history and background story of the key scientific issues solved in order to realize high efficiency solid state lighting. The fundamental discovery of high quality p-type doping by removing hydrogen passivation, and the role of the InGaN/GaN double heterostructure in achieving high brightness blue LEDs and Laser Diodes will be described.
|