Topic:
Electron Multi-Beam Technology for Mask and Wafer Direct Write
Abstract:
A new writer architecture consisting of a multi-beam column integrated onto a novel platform with full 12 Gbit/s datapath has been realized and evaluated. The multi-beam column provides 262k programmable beams of 20nm individual size and 50keV energy. The current density is up to 1 A/cm2 so that the current through the column is about 1 µA. The integrated mask writer represents the first multi-beam system suitable to write full area 6” masks including all state-of-the-art tool and process corrections. The MBMW (multi-beam mask writer) performance for the 10nm and 7nm mask nodes will be outlined, and enhancements when using smaller beam size and higher data path speed. The potential applicability of the realized electron multi-beam technology for wafer direct write will be discussed.