As the minimum feature of microelectronic devices shrinks down to single nm, planarization is becoming one of the most important processes to maintain its device yield. Especially in the front-end-of-line (FEOL) process, instead of etching method, usage of chemical mechanical polishing (CMP) method is increasing. To achieve efficient planarization at the miniaturized device dimensions which is becoming smaller than the particle sizes, there is a need to understand the phenomena of polishing or interaction between film, slurry and pad. In this presentation, overview of basic study and the science (usage of electro-chemistry, viscosity, z-potential, etc.) of CMP process to characterize its ideal surrounding consumables such as slurry and post CMP cleans. Also, the similarity of basic chemical concept between slurry and post CMP clean will be discussed with the analytical study and understanding of the ideal surface of film status.
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