Primary methods being investigated for future nodes are EUV lithography (EUVL) and directed self-assembly (DSA). The advancement of both methods strongly depends on material design and performance. Chemically amplified resist has shown progress improving resolution; however, it is still challenging to incorporate low-dose and line edge roughness (LER) requirements within the same resist. One method for achieving the resist performance targets is to decouple 1 or 2 of the 3 required properties from the resist. DSA requires a very specific complementary set of materials for optimum pattern formation. Block copolymers and neutral and guiding layers must have the proper surface energies to allow for phase separation. Brewer Science is investigating materials that would enhance EUVL and DSA material performance. Preliminary results obtained in both technologies will be presented.
|
