Consequently, High-End Package with large sized die, with thin substrate, with low K Si node device, is already under high volume production.
However, there is a high possibility of yield drop issue in conventional mass-reflow process and potential reliability due to the highly concerned tensile stress between low k die and substrate by CTE mismatch especially at the edge of the die. Therefore, Advanced interconnection solution with Laser Assisted Bonding will be an innovative solution.