


	Professor Shuji Nakamura Materials Department Solid State Lighting and Energy Center University of California Santa Barbara

Education:
• Master’s and Ph.D. degrees in engineering from the University of Tokushima in 1979 and 19942010-2012

Experiences:
• Succeeded in growing high quality InGaN layers exhibiting blue emission in 1992 • Inventing the first high efficient double-hetero structure blue light emitting diode (LED) using an InGaN emitting layer and commercialized them in 1993 • Received the Nobel Prize in Physics in 2014 due to the invention

Biography:
Shuji Nakamura was born in Ehime, Japan on May 22, 1954. He obtained his master’s and Ph.D. degrees in engineering from the University of Tokushima in 1979 and 1994, respectively. He succeeded in growing high quality InGaN layers exhibiting blue emission in 1992, a world’s first. He then succeeded in inventing the first high efficient double-hetero structure blue light emitting diode (LED) using an InGaN emitting layer and commercialized them in 1993. He received the Nobel Prize in Physics in 2014 due to this invention.